We are no longer maintaining the GSS project, due its obsolete design.
Users are strongly encouraged to migrate to
Genius-Open, which is the open-source edition
of the device simulator Genius. Genius-Open is released under GPL.
The source code can be downloaded from
or from Github.
GSS is a commercial quality TCAD
software which enables two-dimensional numerical simulation of semiconductor device with well-known
drift-diffusion and hydrodynamic method. The initial goal of GSS is to provide an efficient tool to calculate the
semiconductor device response to the EMP (Electromagnetic Pulse). After two years' hard work,
GSS has reached its stable version 0.4x. I published it for attracting
more people work with this project.
Fig 1. NMOS transistor and the inner distribution of potential
GSS is an Open SourcedFree Software. The source code is available free of
charge under the Free Software BSD
license. The code is written in C++ with STL usage. Careful attention is paid to performance
The software has the following basic features:
GSS has Basic DDM (drift-diffusion method) solver, Lattice Temperature Corrected DDM
solver, EBM (energy balance method) solver and Quantum corrected DDM solver which based on
density-gradient theory. The former 0.37 version has a full HDM (hydrodynamic method)
The GSS program is directed via input statements by a user specified disk file.
Support triangle mesh generation and adaptive mesh refinement.
Employed PMI (physical
model interface) to support various materials, including compound semiconductor materials such as
SiGe and AlGaAs.
Support DC sweep,
transient and AC sweep calculations. The device can be stimulated by voltage or current
Support IV curve automatically trace. (Experimental)
Support some advanced features such as high field mobility, impact ionization,
band-band tunneling and so on.
mixed simulation (with NGSPICE) via network since
2D and 3D plot capacity for post-process.
Process simulation includes thermal diffusion, ion implantation, thermal oxidation.
The examples will give you an image of
what GSS can do.
Two demensional process simulation for one demensional mask is added to GSS within GSS-TechSim.
GSS-TechSim can be used for simulation of thermal diffusion, ion implantation, thermal oxidation.
Process simulation can take the advantages of both analytical solution and numzerical solution of diffusion equations, and it has seen success in simulating bird's beak effect, impurity redistribution effect and some other important phenomenon in semiconductor industry.
High dielectric constant materials is added to the material library.
Release 0.46-p11, this is a bug fix update 3rd July, 2008
New features/important changes include:
The damping method is greatly improved. Add automatically time
step control to transient analyses.
Add Quantum corrected QDDM solver based
on density-gradient theory.
GSS now use Automatically Differentiation (AD) to
calculate Jacobian matrix. Development efficiency is greatly improved. This
method is intended to be used in 3D software development.
Thanks to AD, the EJ model for mobility and
impact ionization calculation has been added to DDML1E/2E with little
Newton solver can use extra
BnakRose or Potential damping to enhance stability.
The obsolete DDML1 and
DDML2 solver were removed.
The following materials:
InAs, InN, InP, InSb, HgCdTe and 3C-SiC have been added to material